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SI7846DP-T1-E3 Specification,DataSheet,PDF...
Specifications: MOSFET N-CH 150V PPAK 8-SOIC
Mounting Type:Surface Mount
FET Type:N-Channel
Drain to Source Voltage (Vdss):150V
Current - Continuous Drain (Id) @ 25° C:24.5A
Rds On (Max) @ Id, Vgs @ 25° C:50 mOhms @ 5A, 10V
Input Capacitance (Ciss) @ Vds:-
Power - Max:1.9W
Gate Charge (Qg) @ Vgs:36nC @ 10V
Package / Case:8-SOIC
Gate to Source Voltage (Vgs Max):20V
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Min/Max : 3,000
Pack : Tape & Reel (TR)
Manufacturer : Vishay/Siliconix
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Data Sheet    :

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