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SI5511DC-T1-E3 Specification,DataSheet,PDF...
Specifications: MOSFET N/P-CH 30V CHIPFET 1206-8
Mounting Type:Surface Mount
FET Type:N and P-Channel
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25° C:4A, 2.3A
Rds On (Max) @ Id, Vgs @ 25° C:55 mOhms @ 4.8A, 4.5V
Input Capacitance (Ciss) @ Vds:260pF @ 15V
Power - Max:2.1W
Gate Charge (Qg) @ Vgs:7.1nC @ 5V
Package / Case:1206-8 ChipFet
Gate to Source Voltage (Vgs Max):12V

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Manufacturer : Vishay/Siliconix
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