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SI5853DC-T1-E3 Specification,DataSheet,PDF...
Specifications: MOSFET P-CH 20V CHIPFET 1206-8
Mounting Type:Surface Mount
FET Type:P-Channel
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25° C:2.7A
Rds On (Max) @ Id, Vgs @ 25° C:110 mOhm @ 2.7A, 4.5V
Input Capacitance (Ciss) @ Vds:-
Power - Max:1.1W
Gate Charge (Qg) @ Vgs:7.7nC @ 4.5V
Package / Case:1206 x 8
Gate to Source Voltage (Vgs Max):8V

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Pack : Tape & Reel (TR)
Manufacturer : Vishay/Siliconix
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